WebSep 7, 2012 · The issue, composition dependence of glass-forming ability (GFA) in metallic glasses (MG), has been investigated by systematic experimental measurements coupled with theoretical calculations in Cu-Zr and Ni-Nb alloy systems. It is found that the atomic-level packing efficiency strongly relates to their GFA. The best GFA is located at the … WebChinese Chemical Letters (CCL) (ISSN 1001-8417) was founded in July 1990. The journal publishes preliminary accounts in the whole field of chemistry, including inorganic chemistry, organic chemistry, analytical chemistry, physical chemistry, polymer chemistry, applied chemistry, etc., satisfying a real and urgent need for the …

Contents: Chin. J. Chem. 12/2024 - 2024 - Wiley Online Library

WebThe diabatization of the PEM was specifically achieved by our recent method [Chin. J. Chem. Phys. 34, 825 (2024)], which was based on adiabatic energies without the … WebPreferential oxidation of CO (PROX) in H 2-rich stream is critical to the production of clean H 2 for the H 2-based fuel cells, which provide clean and efficient energy conversion.Development of highly active and selective PROX catalysts is highly desirable but proved to be extremely challenging. dewalt wire stripper bushings

Understanding rotational mode specificity in the O

WebMay 8, 2009 · This review introduces in detail the history of the discovery of the nonlinear optical crystal KBe2BO3F2 (KBBF), with a full description of its growth, space structure, optical properties, and capability to generate deep-ultraviolet (UV) harmonic generation. Several important applications developed recently using all-solid-state deep-UV light … WebJan 1, 2012 · J Phys Chem B 105(44):10874–10883. CrossRef CAS Google Scholar Holzbecher E (2006) Thin layer flow cell modelling. in COMSOL users conference,Frankfurt ... Chin J Chem Phys 23(4):442. … WebJun 4, 1998 · Electron mobilities in GaN and InN are calculated, by variational principle, as a function of temperature for carrier concentrations of 10 16, 10 17, and 10 18 cm −3 with compensation ratio as a parameter. Both GaN and InN have maximum mobilities between 100 and 200 K, depending on the electron density and compensation ratio, with lower … dewalt wireless neck headphones